Ipswich, MA, United States of America

Kenneth Swenson

This inventor holds 1 USPTO granted patent. Top assignee: Varian Semiconductor Equipment Associates, Inc.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenneth Swenson. Retrieved from https://idiyas.com/inventor/kenneth-swenson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: The Innovations of Kenneth Swenson

Introduction

Kenneth Swenson is an accomplished inventor based in Ipswich, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of ion implantation.

Latest Patents

Swenson holds a patent for "Magnetic monitoring of a Faraday cup for an ion implanter." This innovative approach provides a method for magnetic monitoring of a Faraday cup located within a vacuum chamber. The Faraday cup is designed to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor surrounding the vacuum chamber is configured to distinguish the magnetic field associated with the Faraday cup from stray magnetic fields.

Career Highlights

Kenneth Swenson is currently employed at Varian Semiconductor Equipment Associates, Inc., where he continues to develop cutting-edge technologies in semiconductor manufacturing. His work has been instrumental in enhancing the efficiency and accuracy of ion implantation processes.

Collaborations

Some of his notable coworkers include Joseph P Dzengeleski and Morgan Evans, who have collaborated with him on various projects within the company.

Conclusion

Kenneth Swenson's contributions to the field of semiconductor technology, particularly through his innovative patent, highlight his role as a key inventor in the industry. His work continues to influence advancements in ion implantation techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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