Yokohama, Japan

Kenji Shibata

This inventor holds 2 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1988-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenji Shibata. Retrieved from https://idiyas.com/inventor/kenji-shibata-fxrgpx0u

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1988-1990

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2 patents (USPTO):Explore Patents

Title: Kenji Shibata: Innovator in Semiconductor Technology

Introduction

Kenji Shibata, an accomplished inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, Shibata's innovative work focuses on enhancing the reliability and efficiency of semiconductor devices, particularly in nonvolatile memory and CMOS technology.

Latest Patents

Shibata's latest patents include a groundbreaking nonvolatile semiconductor memory device and an advanced CMOS semiconductor device. In his nonvolatile semiconductor memory device, a second impurity diffusion layer is established within a semiconductor substrate, maintaining a predetermined distance from the first diffusion layer. This configuration allows for the careful management of program potential supplied to the diffusion layer, effectively preventing non-selected memory cells from experiencing half-selection. The result is a marked improvement in the overall reliability of the semiconductor device.

Additionally, Shibata's CMOS semiconductor device features an innovative trench design near the boundary of two MOS transistors. This trench is coated with a thermal oxide film and filled with a semiconductor substance, allowing for electrical isolation between the two transistors. By increasing the latch-up holding voltage, this device provides enhanced resistance to noise, safeguarding against potential device failure. The trench depth, finely tuned to be shallower than the low impurity atom concentration layer while remaining deeper than a specified threshold, further optimizes device performance.

Career Highlights

Kenji Shibata serves as an inventor at Kabushiki Kaisha Toshiba, a leading company in the electronics industry known for its commitment to innovation and technological advancement. His work is characterized by a dedication to creating devices that not only meet but exceed current industry standards.

Collaborations

Throughout his career, Shibata has collaborated with talented individuals such as Youichiro Niitsu and Shinji Taguchi. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies and innovations.

Conclusion

Kenji Shibata stands out as a notable figure in the semiconductor sector, with his inventions paving the way for more reliable and efficient electronic devices. His contributions are a testament to the power of innovation and collaboration in the constantly evolving field of technology. As he continues to explore new ideas and push boundaries, the impact of his work will undoubtedly resonate within the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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