Kenji Okumura

Title: Kenji Okumura: Innovator in Semiconductor Technology

Introduction

Kenji Okumura is a prominent inventor based in Osaka, Japan, known for his contributions to semiconductor technology. With a total of four patents to his name, Okumura has made significant advancements in the field of gas source molecular beam epitaxy.

Latest Patents

One of Okumura's latest patents is an apparatus for gas source molecular beam epitaxy. This invention involves a vacuum chamber that is divided into two spaces: the substrate heating space and the crystal growth space. The degree of vacuum in the substrate heating space is set lower than the pressure required for silicon growth, while the crystal growth space maintains a vacuum level corresponding to the pressure needed for silicon growth. This innovative design allows for the growth of silicon-based semiconductors with excellent reproducibility over extended periods. Additionally, the heat efficiency towards the substrate is enhanced by enclosing the upper and surrounding areas of the heating means with a heat shielding body, which helps to reduce energy costs.

Career Highlights

Okumura has established himself as a key figure in the semiconductor industry through his work at Daidousanso Co., Ltd. His expertise in molecular beam epitaxy has positioned him as a valuable asset in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Okumura has collaborated with notable colleagues, including Hiromi Kiyama and Hidehiko Oku. These partnerships have contributed to the success of his innovative projects and have fostered a collaborative environment in the field of semiconductor research.

Conclusion

Kenji Okumura's contributions to semiconductor technology, particularly through his patents in gas source molecular beam epitaxy, highlight his role as an influential inventor. His work continues to impact the industry, paving the way for advancements in semiconductor manufacturing.