The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
Dec. 26, 1989
Akira Yoshino, Osaka, JP;
Kenji Okumura, Osaka, JP;
Yoshinori Ohmori, Osaka, JP;
Toshiharu Ohnishi, Osaka, JP;
Daidousanso Co., Ltd., Osaka, JP;
Abstract
The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method. Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer. According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.