Hyogo, Japan

Kenji Morisawa


Average Co-Inventor Count = 10.0

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1998-2000

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2 patents (USPTO):Explore Patents

Title: Kenji Morisawa: Innovator in Semiconductor Technology

Introduction

Kenji Morisawa is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the manufacturing processes and performance of semiconductor devices.

Latest Patents

Morisawa's latest patent involves a semiconductor device that features an element isolating oxide film with enhanced upper flatness. This innovation includes a method for manufacturing the device, which ensures that the thickness of the gate electrode layer and the height of the element isolating oxide film are maintained within specific parameters. By adhering to these parameters, the design prevents unetched portions during the etching step for patterning the gate electrode layer, thereby avoiding short-circuits. The improved flatness of the element isolating oxide film also reduces overetching in the active region, protecting the gate insulating film and the underlying substrate surface.

Career Highlights

Morisawa is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise in the field has led to innovations that enhance device performance and manufacturing efficiency.

Collaborations

Some of his notable coworkers include Kaoru Motonami and Shigeru Shiratake, who have collaborated with him on various projects within the semiconductor industry.

Conclusion

Kenji Morisawa's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. His patents reflect a commitment to improving device performance and manufacturing processes, solidifying his reputation as a leading inventor in the field.

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