Mitsubishi Denki Kabushiki Kaisha

Kenji Morisawa

Takaaki Murakami

Kaoru Motonami

Shigeru Shiratake

Yuichi Yokoyama

Yasuyoshi Itoh

Hiroshi Matsuo

Kenji Yasumura

Satoshi Hamamoto

Ritsuko Gotoda

There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode. This prevents shaving of the gate insulating film and the underlying substrate surface.

Semiconductor device having an element isolating oxide film and method

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Hyogo, Japan

Kenji Morisawa