Fukusima, Japan

Kenji Kiuchi


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Kenji Kiuchi: Innovator in III-N Device Technology

Introduction

Kenji Kiuchi is a notable inventor based in Fukushima, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of III-N devices. His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Kenji Kiuchi holds a patent for "Recessed ohmic contacts in a III-N device." This invention involves a device that includes a III-N layer with a unique structure. The device features a conductive contact on the upper side of the III-N layer, which extends into the layer itself. The design of the conductive contact includes a top side facing away from the lower side of the III-N layer, and a bottom side that has a specific configuration to enhance performance.

Career Highlights

Kiuchi is currently associated with Transphorm Inc., a company known for its advancements in power conversion technology. His work at Transphorm has allowed him to focus on innovative solutions that improve the efficiency and effectiveness of electronic devices. With 1 patent to his name, he continues to push the boundaries of technology in his field.

Collaborations

Throughout his career, Kenji Kiuchi has collaborated with esteemed colleagues such as Toshihide Kikkawa and Tsutomu Hosoda. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Kenji Kiuchi's contributions to III-N device technology exemplify the spirit of innovation in the semiconductor industry. His work not only enhances the performance of electronic devices but also paves the way for future advancements in technology.

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