Hiroshima, Japan

Kenji Atarashiya


Average Co-Inventor Count = 7.1

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 1989-1994

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4 patents (USPTO):Explore Patents

Title: The Innovative Mind of Kenji Atarashiya: A Pioneer in Ion Source Technology

Introduction: Kenji Atarashiya, an esteemed inventor based in Hiroshima, Japan, has made significant contributions to the field of ion source technology. With a total of four patents to his name, Atarashiya has demonstrated exceptional ingenuity and a commitment to advancing technological standards in his area of expertise.

Latest Patents: Among his latest creations is a revolutionary DC or High Frequency Ion Source. This invention features a hollow cathode and a substantially hollow anode designed for the application of either direct current or alternating voltage. The device includes a gas inlet for discharging gas into the cathode, along with a cathode heater situated between the anode and cathode. A strategically placed magnet enhances plasma uniformity, while the ion extraction outlet, characterized by its elongated rectangular shape, works in harmony with the ion extraction and acceleration electrodes to manage the energy of the extracted ions effectively. Remarkably, both the anode and cathode are constructed as hollow boxes, with the cathode featuring an elongated rectangular cross-section encased within the anode. Notably, this ion source can be formed in an arcuate shape, accommodating round objects, and has the potential to be integrated seamlessly with a sputtering device.

In another groundbreaking patent, Atarashiya introduced a sputtering apparatus that includes two electrodes and a sputtering target attached to one of them. This innovation facilitates the production of electric discharge in a vacuum, leading to the sputtering of target particles, which are then deposited on a substrate. The apparatus is designed with a narrow elongated slot, which serves as a sputter particle outlet, creating a pressure differential that enhances sputtering efficiency. This integrated approach between the sputtering apparatus and the ion source exemplifies Atarashiya's forward-thinking design philosophy.

Career Highlights: Throughout his career, Kenji Atarashiya has worked for notable companies such as Mitsubishi Jukogyo Kabushiki Kaisha and Nihon Nensho System Kabushiki Kaisha. His experiences at these institutions have allowed him to refine his skills and contribute to advancements in the field of ion technology.

Collaborations: During his tenure, Atarashiya has collaborated with esteemed colleagues, including Kenichi Yanagi and Toshio Taguchi. These partnerships have fostered a collaborative environment, driving innovation and enhancing the impact of their collective work in the industry.

Conclusion: Kenji Atarashiya's innovative spirit and technical expertise in ion source technology have positioned him as a leading inventor in his field. His latest patents reflect a commitment to enhancing performance and efficiency in related applications. As he continues to push the boundaries of technology, Atarashiya's contributions will undoubtedly inspire future generations of inventors and technologists.

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