The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Aug. 12, 1993
Kenichi Yanagi, Hiroshima, JP;
Mitsuo Kato, Hiroshima, JP;
Kazuya Tsurusaki, Hiroshima, JP;
Toshio Taguchi, Hiroshima, JP;
Kenji Atarashiya, Hiroshima, JP;
Tadashi Rokkaku, Hiroshima, JP;
Ichiro Yamashita, Hiroshima, JP;
Mitsubishi Jukogyo Kabushiki Kaisha, Tokyo, JP;
Abstract
A DC or high frequency ion source comprising a hollow cathode and a substantially hollow anode for applying a DC or alternating voltage; a gas inlet disposed at a first side of the cathode for supplying a discharge gas into the cathode; a cathode heater disposed between the anode and the cathode; a magnet disposed adjacent the anode to thereby improve the uniformity of a plasma; an ion extraction outlet disposed at a second side of the cathode opposite to the gas inlet and having an elongated rectangular shape; and an ion extraction electrode and an acceleration electrode for controlling the energy of extracted ions. Both the anode and cathode comprise substantially hollow boxes. The cathode includes an elongated rectangular cross section and is disposed inside the substantially hollow anode. The ion extraction electrode and the acceleration electrode have an elongated rectangular shape and an opening coextensive with the ion extraction outlet. The ion extraction electrode and the acceleration electrode are disposed adjacent, and aligned with, the ion extraction outlet. The ion source can be formed with an arcuate shape to accommodate round objects. The ion source can also be formed integrally with a sputtering device.