Itami, Japan

Kenichi Yamanaka

This inventor holds 2 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1979-1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenichi Yamanaka. Retrieved from https://idiyas.com/inventor/kenichi-yamanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1979-1982

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2 patents (USPTO):Explore Patents

Title: Kenichi Yamanaka: Innovator in Thermo-sensitive Semiconductor Technology

Introduction

Kenichi Yamanaka is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of thermo-sensitive switching elements. With a total of 2 patents, Yamanaka's work has paved the way for advancements in electronic devices.

Latest Patents

Yamanaka's latest patents include a thermo-sensitive switching element manufacturing method. This invention involves a thermo-sensitive semiconductor element characterized by a four-layer pnpn structure. A defect layer is formed at the junction of the p base layer and the n base layer through the implantation of argon ions. This process provides the semiconductor element with a desired thermo-sensitive characteristic. The element undergoes heat treatment, such as annealing at temperatures ranging from 400°C to 900°C in a nitrogen atmosphere, to control the leakage current into the element with the defect layer.

Another notable patent is the process of producing a semiconductor thermally sensitive switching element. In this method, a planar pnpn thyristor structure is prepared, which includes an SiO2 film with a thickness of about 10,000Å. This film is wholly disposed on its main face, where pn junctions are exposed. The portion of the SiO2 film underlaid with an exposed edge of a collector junction is replaced by a thinner SiO2 film, about 1,000Å thick. Argon ions with an implantation energy of 200 KeV are then implanted into the thyristor structure through both films, allowing for the formation of a low lifetime region with numerous lattice defects. This results in a semiconductor thermally sensitive switching element that can switch at sufficiently low temperatures.

Career Highlights

Kenichi Yamanaka is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the company's reputation as a leader in the electronics industry.

Collaborations

Yamanaka has collaborated with notable coworkers, including Yutaka Mihashi and Toshio Sogo. Their combined expertise has further enhanced the development of cutting-edge technologies in the field.

Conclusion

Kenichi Yamanaka's contributions to thermo-sensitive semiconductor technology exemplify his innovative spirit and dedication to advancing electronic devices. His patents reflect a deep understanding of

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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