The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1982
Filed:
Aug. 06, 1980
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29573 ; 2957 / ; 357 28 ; 357 91 ;
Abstract
A thermo-sensitive semiconductor element having a four-layer pnpn structure. A defect layer is formed at the junction of the p base layer and the n base layer by implantation of argon ions to provide a semiconductor element having a desired thermo-sensitive characteristic. The element is subjected to heat treatment such as annealing at temperatures in a range of from 400.degree. C. to 900.degree. C. in a nitrogen atmosphere after the argon ion implantation so that the leakage current into the element having the defect layer is controlled.