Company Filing History:
Years Active: 2004-2005
Title: Kenichi Ohto: Innovator in Semiconductor Technology
Introduction
Kenichi Ohto is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing semiconductor devices.
Latest Patents
One of his latest patents is a method for manufacturing a semiconductor device. This invention features an alignment mark section on a semiconductor substrate that includes two grooves filled with silicon oxide. The design ensures that the surface of the semiconductor substrate, sandwiched by these grooves, is lower than other portions, creating a step with a predetermined depth in the alignment mark section. Another notable patent is for a MOSFET with a graded gate oxide layer. In this invention, a smile oxide film serves as a gate oxide film, formed beneath a three-layer poly-metal gate consisting of a doped polysilicon layer, a tungsten layer, and a SiON layer. The smile oxide film has varying thicknesses, with the first region beneath the edge of the poly-metal gate being thicker than the second region located beneath the central portion.
Career Highlights
Kenichi Ohto is currently employed at Renesas Technology Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the technology used in modern electronic devices.
Collaborations
Throughout his career, Ohto has collaborated with notable colleagues, including Takashi Terauchi and Shuichi Ueno. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Kenichi Ohto's contributions to semiconductor technology through his innovative patents highlight his expertise and commitment to advancing the field. His work continues to influence the industry and pave the way for future innovations.