Gotemba, Japan

Kenichi Kanai

This inventor holds 2 USPTO granted patents. Top assignee: Tokai Carbon Company, Ltd.. Active years: 1999-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenichi Kanai. Retrieved from https://idiyas.com/inventor/kenichi-kanai-345lgnm6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1999-2005

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2 patents (USPTO):Explore Patents

Title: Kenichi Kanai: Innovator in Silicon Carbide Technology

Introduction

Kenichi Kanai is a prominent inventor based in Gotemba, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the development of silicon carbide (SiC) technologies. With a total of 2 patents to his name, Kanai's work is recognized for its innovative approaches and practical applications.

Latest Patents

Kanai's latest patents include a nitrogen-doped n-type SiC-formed material and a method for manufacturing this material. The nitrogen-doped SiC-formed material consists of high purity β-type crystals, which exhibit low resistivity and low light transmittance. This makes it suitable for use as a substrate in semiconductor fabrication devices. The manufacturing method involves a chemical vapor deposition (CVD) process, where nitrogen gas is introduced alongside raw material gases to form a SiC film on a substrate. The resulting material has a specific gravity of 3.15 or more, light transmittance ranging from 1.1% to 0.05%, and resistivity of 3×10^10 Ω·m.

Another notable patent focuses on the fabrication of SiC films with excellent strength and thermal characteristics. These films are produced through a CVD process and demonstrate thermal conductivity between 100 and 300 W/m·K, with an average grain diameter of the internal structure ranging from 4 to 12 micrometers. The thermal conductivity ratio along the direction of SiC crystal growth to that in the perpendicular direction is ideally between 1.10 and 1.40.

Career Highlights

Kenichi Kanai is currently employed at Tokai Carbon Company, Ltd., where he continues to advance his research in silicon carbide technologies. His work has positioned him as a key figure in the semiconductor industry, contributing to the development of materials that enhance device performance.

Collaborations

Kanai collaborates with notable colleagues, including Akihiro Kuroyanagi and Tomiya Yasunaka. Their combined expertise fosters innovation and drives advancements in semiconductor materials.

Conclusion

Kenichi Kanai's contributions to silicon carbide technology exemplify the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to enhancing material properties for better performance in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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