The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Aug. 26, 1998
Applicant:
Inventors:
Akihiro Kuroyanagi, Chigasaki, JP;
Tomiya Yasunaka, Chigasaki, JP;
Yuji Ushijima, Gotemba, JP;
Kenichi Kanai, Gotemba, JP;
Assignee:
Tokai Carbon Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B / ; B01J / ; B01J / ; C30B / ;
U.S. Cl.
CPC ...
423345 ; 423346 ; 502177 ; 502178 ; 117 95 ;
Abstract
An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the internal structure between 4 to 12 .mu.m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40.