Keng Ouyang

Title: Keng Ouyang: Innovator in Semiconductor Technology

Introduction

Keng Ouyang is a notable inventor based in Belle Mead, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of contacts for n-type III-V semiconductors.

Latest Patents

Keng Ouyang holds a patent for a contact to n-GaN with Au termination. This invention involves forming a contact for n-type III-V semiconductors, such as GaN and related nitride-based semiconductors. The process includes depositing Al, Ti, Pt, and Au in that order on the n-type semiconductor and annealing the resulting stack at approximately 400-600°C for about 1-10 minutes. The resulting contact provides a low-resistance, ohmic contact to the semiconductor and excellent bonding to gold leads.

Career Highlights

Keng Ouyang is currently employed at Emcore Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, Keng has collaborated with esteemed colleagues, including Michael G Brown and Hari S Venugopalan. These collaborations have contributed to the innovative advancements in the semiconductor field.

Conclusion

Keng Ouyang's contributions to semiconductor technology, particularly through his patent on n-GaN contacts, highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced semiconductor devices.