Company Filing History:
Years Active: 2005
Title: Ken Tanpairoj: Innovator in Memory Technology
Introduction
Ken Tanpairoj is a notable inventor based in Palo Alto, California. He has made significant contributions to the field of memory technology, holding two patents that showcase his innovative approach to improving memory cell functionality.
Latest Patents
One of his latest patents is titled "Erase method for a dual bit memory cell." This patent describes an erase methodology for flash memory cells in a multi-bit memory array. The process involves performing an erase verify of bits in normal locations and applying erase pulses to both normal and complimentary bits if necessary. The methodology ensures that bits are subjected to a soft programming verify to enhance their reliability.
Another significant patent is the "Method of protecting a memory array from charge damage during fabrication." This invention outlines a method for fabricating a memory array while safeguarding it from charge damage. It involves forming bitlines and wordlines in a substrate, along with metal regions that help reduce charge damage by maintaining a low antenna ratio. Additional protective measures, such as diodes or fuses, can also be implemented to enhance the memory array's integrity.
Career Highlights
Ken Tanpairoj is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work focuses on advancing memory technologies that are crucial for modern computing applications.
Collaborations
Throughout his career, Ken has collaborated with talented individuals such as Darlene G Hamilton and Yi He. These collaborations have contributed to the development of innovative solutions in memory technology.
Conclusion
Ken Tanpairoj's contributions to memory technology through his patents reflect his dedication to innovation and improvement in the field. His work at Advanced Micro Devices Corporation continues to influence the future of memory solutions.