Kuwana, Japan

Keita Nishigaya


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Keita Nishigaya: Innovator in Semiconductor Manufacturing

Introduction

Keita Nishigaya is a notable inventor based in Kuwana, Japan. He has made significant contributions to the field of semiconductor manufacturing, showcasing his expertise through his innovative patent.

Latest Patents

Nishigaya holds a patent for a method of manufacturing a semiconductor device. This method involves performing a first thermal processing of a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above the surface of the silicon substrate. Following this, a second thermal processing is conducted in a second atmosphere containing hydrogen and at a temperature lower than the first, which terminates the surface of the silicon substrate with hydrogen.

Career Highlights

Keita Nishigaya is associated with Fujitsu Semiconductor Limited, where he applies his knowledge and skills in semiconductor technology. His work has contributed to advancements in the manufacturing processes of semiconductor devices.

Collaborations

Some of his notable coworkers include Naoyoshi Tamura and Mitsuaki Hori, who collaborate with him in various projects within the semiconductor industry.

Conclusion

Keita Nishigaya's innovative approach to semiconductor manufacturing has led to valuable advancements in the field. His contributions continue to influence the industry and inspire future innovations.

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