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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9431285 B1

PDFFull Text
Expired
Date of Patent:
Aug. 30, 2016

Filed:

Nov. 30, 2012

Method of manufacturing semiconductor device

Applicant:

Fujitsu Semiconductor Limited, Yokohama, Kanagawa, JP;

Inventors:

Naoyoshi Tamura, Yokohama, JP;

Keita Nishigaya, Kuwana, JP;

Mitsuaki Hori, Kuwana, JP;

Hiroe Kawamura, Inabe, JP;

Assignee:

FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Julia Slutsker

Assistant Examiner:

Natalia Gondarenko

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/76 (2006.01); H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76 (2013.01); H01L 21/02046 (2013.01); H01L 21/302 (2013.01); H01L 21/3247 (2013.01); H01L 21/76224 (2013.01); H01L 21/28238 (2013.01); H01L 29/665 (2013.01); H01L 29/6659 (2013.01);
Abstract

A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

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Tamura, Naoyoshi. (2016). Method of manufacturing semiconductor device (U.S. Patent No. 9431285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9431285

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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