The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Nov. 30, 2012
Applicant:
Fujitsu Semiconductor Limited, Yokohama, Kanagawa, JP;
Inventors:
Naoyoshi Tamura, Yokohama, JP;
Keita Nishigaya, Kuwana, JP;
Mitsuaki Hori, Kuwana, JP;
Hiroe Kawamura, Inabe, JP;
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/76 (2006.01); H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76 (2013.01); H01L 21/02046 (2013.01); H01L 21/302 (2013.01); H01L 21/3247 (2013.01); H01L 21/76224 (2013.01); H01L 21/28238 (2013.01); H01L 29/665 (2013.01); H01L 29/6659 (2013.01);
Abstract
A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.