Fujitsu Semiconductor Limited

Keita Nishigaya

Naoyoshi Tamura

Mitsuaki Hori

Hiroe Kawamura

A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

Growing community of inventors

Kuwana, Japan

Keita Nishigaya