This inventor holds 1 USPTO granted patent. Top assignee: Fuji Electric., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Keisuke Kobayashi: Semiconductor Device Inventor
Introduction
Keisuke Kobayashi is an inventor based in Matsumoto, Japan, whose patent work includes semiconductor device design and manufacturing. He is associated with Fuji Electric Co., Ltd.
Latest Patents
Kobayashi is named on one patent, titled “Semiconductor Device and Method of Manufacturing the Same.” The invention describes a semiconductor device with an insulated-gate electrode structure, base and main electrode regions, and a contact plug placed in a trench with a barrier metal film. Its design also specifies the shape and alignment of the trench and contact hole, including curved side-wall surfaces intended to support the device structure. His listed portfolio includes 1 patent.
Career Highlights
The available information identifies Kobayashi’s work through his semiconductor patent and his association with Fuji Electric Co., Ltd. The patent focuses on device structure and manufacturing.
Collaborations
Kobayashi’s listed coworkers include Makoto Endou and Shiomi Inoue. They are also associated with the patent information provided.
Conclusion
Keisuke Kobayashi’s documented contribution is a semiconductor device invention addressing contact structure and manufacturing, reflecting his work in the field of semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile