Keiichi Kon

Title: Keiichi Kon and His Semiconductor Etching Patents.

Introduction

Keiichi Kon is an inventor associated with Aiko, Japan, and Nippondenso Co., Ltd. His patent work focuses on dry etching processes for semiconductor substrates, particularly methods for forming trenches while managing etching residue and mask wear. The supplied information lists 2 patents.

Latest Patents

Both listed patents are titled “Dry Etching Process for Semiconductor.” They describe related approaches to forming trenches on semiconductor surfaces using a mixture of etchant, cleaning, and reactive gases.

The first patent describes using a bromine-containing etchant to form trenches, a halogen-containing cleaning gas to evaporate etching residue, and a reactive gas, such as nitrogen, to react with material formed during etching and control trench inclination.

The second patent describes forming a mask to define trench locations before etching. Its gas mixture includes a bromine-containing etchant, a halogen-containing cleaning gas, and a reactive gas that reacts with material formed during etching and helps reduce mask wear.

Career Highlights

Kon’s listed inventions address practical challenges in semiconductor fabrication, including residue removal, trench profile control, and mask preservation. Together, the patent descriptions present complementary process techniques for producing trenches in semiconductor substrates.

Collaborations

The supplied information identifies Kenji Kondo and Atsushi Komura as Kon’s coworkers. It does not specify their roles in the listed patents.

Conclusion

Keiichi Kon’s listed patent work centers on gas-mixture-based dry etching methods designed to improve semiconductor trench formation and manage residue, trench inclination, and mask wear.