The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Nov. 17, 1993
Applicant:
Inventors:
Atsushi Komura, Obu, JP;
Yoshikazu Sakano, Chita-gun, JP;
Kenji Kondo, Hoi-gun, JP;
Keiichi Kon, Aiko-gun, JP;
Tetsuhiko Sanbei, Narita, JP;
Shoji Miura, Anjo, JP;
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566621 ; 1566431 ; 1566461 ; 437225 ;
Abstract
A process for forming trenches on a surface of a semiconductor substrate by dry etching using a gas mixture. The gas mixture comprises; (1) an etchant gas comprising at least bromine which etches the semiconductor surface to form trenches, (2) a cleaning gas comprising a halogen which evaporates residue formed by the etching, and (3) a reactive gas, e.g. N.sub.2, capable of reacting with material formed during the etching and capable of controlling the inclination of the trenches.