Hyogo, Japan

Keiichi Katayama

This inventor holds 3 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1999-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keiichi Katayama. Retrieved from https://idiyas.com/inventor/keiichi-katayama-535zivw8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 248(Granted Patents)


Company Filing History:


Years Active: 1999-2003

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3 patents (USPTO):Explore Patents

Title: Keiichi Katayama: Innovator in Semiconductor Technology

Introduction

Keiichi Katayama is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His innovative work focuses on materials and methods that enhance the manufacturing processes of semiconductor devices.

Latest Patents

Katayama's latest patents include a material for forming a fine pattern and a method for manufacturing a semiconductor device using this material. The first patent describes a resist pattern that contains a material capable of generating an acid when exposed to light. This resist pattern is then covered with another resist that can crosslink in the presence of the generated acid. By applying heat or exposing the pattern to light, the acid is produced, leading to the formation of a crosslinked layer that thickens the resist pattern. This innovation allows for a reduction in the hole diameter of the resist pattern or the isolation width of the resist pattern.

The second patent outlines a method for producing a pure resist pattern with superior topography that is smaller than the limit of the wavelength of exposure light. In this method, a first resist pattern is coated with a second resist that causes a crosslinking reaction in the presence of an acid. The acid is produced by exposing the pattern to light, forming a crosslinked layer at the boundary between the two resist patterns. This two-step processing technique enables the production of minute pure resist patterns, allowing for reduced diameters of holes or intervals between isolated patterns.

Career Highlights

Keiichi Katayama is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor manufacturing technologies. His work has significantly impacted the efficiency and precision of semiconductor devices.

Collaborations

Throughout his career, Katayama has collaborated with notable colleagues, including Takeo Ishibashi and Toshiyuki Toyoshima. These collaborations have fostered innovation and contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Keiichi Katayama's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence the future of semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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