The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Mar. 29, 2000
Takeo Ishibashi, Tokyo, JP;
Toshiyuki Toyoshima, Tokyo, JP;
Keiichi Katayama, Hyogo, JP;
Naoki Yasuda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
There is described a method of producing a pure resist pattern having superior topography smaller than the limit of wavelength of exposure light. A first resist pattern containing material capable of producing an acid on exposure to light is coated with a second resist containing material which causes a crosslinking reaction in the presence of an acid. An acid is produced in the resist pattern by exposing the pattern to light, thus forming a crosslinked layer along the boundary surface between the first resist pattern and the second resist. As a result, a second resist pattern which is greater than the first resist pattern is formed. Minute pure resist patterns are produced through two-step processing: that is, by removing the second resist from the substrate through use of a liquid prepared by dissolving an organic solvent into water and by rinsing the substrate with water. The diameter of holes formed in the resist or the interval between isolated patterns can be reduced.