Ibaraki, Japan

Keiichi Ishizuka

This inventor holds 1 USPTO granted patent. Top assignee: Nikko Materials Company, Limited. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keiichi Ishizuka. Retrieved from https://idiyas.com/inventor/keiichi-ishizuka-rybwiws5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Keiichi Ishizuka and Sputtering Target Innovation.

Introduction

Keiichi Ishizuka is an inventor associated with Ibaraki, Japan, and Nikko Materials Company, Limited. His patent work addresses cracking in sputtering targets, particularly during manufacturing and sputtering.

Latest Patents

Ishizuka is associated with 1 patent, titled “Sputtering target.” The invention specifies how the grinding direction on a target’s surface should relate to its warping direction after the target is bonded to a backing plate. For rectangular targets, it also describes a relationship between the grinding direction, the warping direction, and the target’s diagonal.

The design aims to reduce or prevent cracking caused by differences in thermal expansion coefficients. It is especially relevant to ceramic target manufacturing, including the process of bonding a target to its backing plate, and seeks to limit similar cracking during sputtering.

Career Highlights

Ishizuka’s documented patent contribution focuses on improving the durability of sputtering targets through manufacturing design. The patent connects surface-grinding orientation with the stresses that can arise during bonding and use.

Collaborations

Ishizuka is associated with Nikko Materials Company, Limited. Yoshikazu Kumahara is identified as a coworker.

Conclusion

Keiichi Ishizuka’s sputtering-target patent presents a practical approach to reducing cracking by coordinating grinding direction with target warping and geometry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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