Himeji, Japan

Kei Tanihira

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kei Tanihira. Retrieved from https://idiyas.com/inventor/kei-tanihira

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 1


Company Filing History:


Years Active: 2022-2025

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3 patents (USPTO):Explore Patents

Title: Kei Tanihira: Innovator in Semiconductor Technology

Introduction

Kei Tanihira is a notable inventor based in Himeji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Tanihira's latest patents include innovative designs for semiconductor devices. One of his patents describes a semiconductor device that consists of a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a second electrode. In this design, the fourth semiconductor layer is strategically located in a second region on the first semiconductor layer, separated from the second semiconductor layer by a portion of the first semiconductor layer. Notably, the impurity concentration of the fourth semiconductor layer is greater than that of the first semiconductor layer but less than that of the second semiconductor layer. Another patent outlines a semiconductor device that features a semiconductor part with a first semiconductor layer of a first conductivity type. This device includes a first electrode on the back surface and a second electrode on the front surface, which comprises a barrier layer and a metal layer. The barrier layer, which contacts the first semiconductor layer, includes vanadium or a vanadium compound as a major component.

Career Highlights

Throughout his career, Kei Tanihira has worked with prominent companies in the technology sector. He has been associated with Toshiba Corporation and Toshiba Electronic Devices & Storage Corporation, where he has contributed to various projects and innovations in semiconductor technology.

Collaborations

Tanihira has collaborated with esteemed colleagues in his field, including Yoichi Hori and Naofumi Hirata. Their combined expertise has furthered advancements in semiconductor research and development.

Conclusion

Kei Tanihira's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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