Ke Xiao

Title: The Innovations of Ke Xiao

Introduction

Ke Xiao is an accomplished inventor based in Hillsboro, OR (US). He has made significant contributions to the field of optical metrology, particularly in the characterization of vias. His work focuses on enhancing the accuracy and reliability of measurements in semiconductor manufacturing.

Latest Patents

Ke Xiao holds a patent titled "Via characterization for BCD and depth metrology." This innovative optical metrology device determines the physical characteristics of at least one via in a sample, such as through-silicon vias (TSV). The device utilizes signal strength data for modeling the bottom critical dimension (BCD) and refining the data used to determine the physical characteristics of the via, including BCD and depth. The metrology device obtains interferometric data and generates height and signal strength data, from which statistical properties may be derived. The height and signal strength data for the via is refined by removing noise using the statistical property, allowing for a more accurate determination of the BCD. In one implementation, a signal strength via map is generated using signal strength data and is fit to a model to determine the BCD for the via.

Career Highlights

Ke Xiao is currently employed at Nanometrics Inc., where he continues to develop innovative solutions in optical metrology. His expertise in the field has positioned him as a valuable asset to the company and the industry at large.

Collaborations

Throughout his career, Ke Xiao has collaborated with notable colleagues, including Brennan Peterson and Timothy Andrew Johnson. These collaborations have further enhanced the impact of his work in the field of metrology.

Conclusion

Ke Xiao's contributions to optical metrology and his innovative patent demonstrate his commitment to advancing technology in semiconductor manufacturing. His work continues to influence the industry and improve measurement accuracy.