Wuxi, China

Ke Ma

This inventor holds 3 USPTO granted patents. Top assignees: Wuxi Smart Memories Technologies Co., Ltd., Wuxi Smart Memories Technologies Co., Ltd.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ke Ma. Retrieved from https://idiyas.com/inventor/ke-ma-1dfen4f6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 33.3

Average Co-Inventor Count = 3.8

ph-index = 1


Company Filing History:


Years Active: 2025-2026

Loading Chart...
3 patents (USPTO):Explore Patents

Title: The Innovations of Ke Ma

Introduction

Ke Ma is a notable inventor based in Wuxi, China. He has made significant contributions to the field of memory devices, showcasing his expertise through his innovative patents. His work is instrumental in advancing technology in memory storage solutions.

Latest Patents

Ke Ma holds a patent for "Signal lines in memory devices and methods for forming the same." This patent describes a memory device that includes a bit line group with a first bit line and a second bit line. The design features a first segment, a second segment, and a twist segment that are conductively connected. The first segment comprises a first portion of both the first and second bit lines, while the second segment includes their respective second portions. The twist segment connects the third portions of both bit lines, enhancing the device's functionality.

Career Highlights

Ke Ma is associated with Wuxi Smart Memories Technologies Co., Ltd., where he applies his knowledge and skills in memory technology. His innovative approach has led to advancements in the design and efficiency of memory devices.

Collaborations

Some of his coworkers include Meilan Guo and Yushi Hu, who contribute to the collaborative environment that fosters innovation within their company.

Conclusion

Ke Ma's contributions to memory device technology through his patent demonstrate his commitment to innovation and excellence in the field. His work continues to influence advancements in memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…