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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12261112 B1

PDFFull Text
Date of Patent:
Mar. 25, 2025

Filed:

Apr. 11, 2022

Signal lines in memory devices and methods for forming the same

Applicant:

Wuxi Smart Memories Technologies Co., Ltd., Wuxi, CN;

Inventors:

Meilan Guo, Wuxi, CN;

Yushi Hu, Wuxi, CN;

Ke Ma, Wuxi, CN;

Jia Sun, Wuxi, CN;

Yu Long, Wuxi, CN;

Assignee:

WUXI SMART MEMORIES TECHNOLOGIES CO., LTD., Wuxi, CN;

Attorney:

Bayes PLLC

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Lawrence C Tynes, Jr.

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/11507 (2017.01); H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H10B 53/30 (2023.02);
Abstract

A memory device includes a bit line group having a first bit line and a second bit line. The bit line group includes a first segment, a second segment, and a twist segment conductively connected to the first segment and the second segment. The first segment includes a first portion of the first bit line and a first portion of the second bit line. The second segment includes a second portion of the first bit line and a second portion of the second bit line. The twist segment includes a third portion of the first bit line and a third portion of the second bit line. The first and second portions of the first bit line and the second bit line each extends in a first lateral direction. The third portion of the first bit line is conductively connected to the first and second portions of the first bit line.

Find Patent Forward Citations

Guo, Meilan. (2025). Signal lines in memory devices and methods for forming the same (U.S. Patent No. 12261112). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12261112

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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