Company Filing History:
Years Active: 2000
Title: Kazuya Mori: Innovator in Memory Technology
Introduction
Kazuya Mori is a notable inventor based in Dallas, TX (US). He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to memory cell architecture.
Latest Patents
Mori's latest patents include a memory cell array architecture for random access memory devices. This architecture features memory cells with a 6F² area, where F represents the minimum feature size. The design incorporates active areas arranged into even and odd columns, allowing for improved alignment and reduced constraints in forming bit line contacts. Additionally, he has developed a ferroelectric random access memory (FeRAM) device that utilizes a folded bit line array. This design achieves a compact memory cell array by employing access transistors of complementary conductivity types, enhancing the efficiency of memory storage.
Career Highlights
Kazuya Mori is currently employed at Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His work focuses on advancing memory technologies that are crucial for modern electronic devices.
Collaborations
Mori collaborates with fellow inventor Toshiyuki Nagata, contributing to the innovative projects at Texas Instruments Corporation.
Conclusion
Kazuya Mori's contributions to memory technology through his patents and work at Texas Instruments Corporation highlight his role as a key innovator in the field. His advancements continue to influence the development of efficient memory solutions.