Kawasaki, Japan

Kazushi Tsuda

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1992.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Kazushi Tsuda: Innovator in Semiconductor Technology

Introduction

Kazushi Tsuda is a prominent inventor based in Kawasaki, Japan. He is known for his contributions to semiconductor technology, particularly in the development of P channel MIS type semiconductor devices. His innovative work has led to advancements in the efficiency and performance of semiconductor devices.

Latest Patents

Kazushi Tsuda holds 1 patent for a P channel MIS type semiconductor device. This invention features P type source and drain regions formed in an N type semiconductor substrate. The design includes low and high impurity concentration layers, with channel side edges of the low concentration impurity layers arranged inside the high concentration impurity layers. This double layer source and drain structure effectively prevents offset gate construction and reduces parasitic resistance.

Career Highlights

Kazushi Tsuda has made significant strides in his career, working with Kabushiki Kaisha Toshiba, a leading company in the semiconductor industry. His expertise in semiconductor devices has positioned him as a key figure in the field, contributing to the advancement of technology.

Collaborations

Kazushi Tsuda has collaborated with notable coworkers, including Katsuhiko Hieda and Kazumasa Sunouchi. Their combined efforts have fostered innovation and development in semiconductor technology.

Conclusion

Kazushi Tsuda's work in semiconductor technology exemplifies the impact of innovative thinking in the field. His contributions continue to influence the development of efficient semiconductor devices, showcasing the importance of research and collaboration in driving technological advancements.

Profile summary based on public USPTO records.
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