The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1992
Filed:
Nov. 12, 1991
Applicant:
Inventors:
Katsuhiko Hieda, Yokohama, JP;
Kazumasa Sunouchi, Yokohama, JP;
Akihiro Nitayama, Kawasaki, JP;
Kazushi Tsuda, Kawasaki, JP;
Hiroshi Takato, Kawasaki, JP;
Naoko Takenouchi, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257344 ; 257371 ; 257408 ; 257900 ;
Abstract
A P channel MIS type semiconductor device have P type source and drain regions formed in a N type semiconductor substrate. Each source and drain regions are constructed the low and high impurity concentration layers. Channel side edges of the low concentration impurity layers arranged inside of the high concentration impurity layers. These double layer source and drain structure prevent the off set gate construction and the parasitic resistance.