Osaka, Japan

Kazushi Nii

This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazushi Nii. Retrieved from https://idiyas.com/inventor/kazushi-nii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2006

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Kazushi Nii: Innovator in Semiconductor Technology

Introduction

Kazushi Nii is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique production method for semiconductor devices.

Latest Patents

Kazushi Nii holds 1 patent for his invention titled "Production method of semiconductor device." This patent describes a process where a thin first conductive film is formed on a barrier film with a crystal structure. Following this, a second conductive film is created on the first conductive film. The two films are then heated to integrate them, resulting in the formation of a third conductive film.

Career Highlights

Kazushi Nii is currently employed at Matsushita Electric Industrial Co., Ltd. His work at this esteemed company has allowed him to explore and innovate within the semiconductor industry. His dedication to advancing technology is evident in his patent and ongoing projects.

Collaborations

Kazushi has collaborated with notable colleagues, including Takeshi Harada and Takenobu Kishida. Their teamwork has contributed to the success of various projects within their organization.

Conclusion

Kazushi Nii's contributions to semiconductor technology exemplify his innovative spirit and dedication to advancing the field. His patent reflects a significant step forward in production methods, showcasing his expertise and commitment to excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…