Tokyo, Japan

Kazuo Yoshihara


Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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2 patents (USPTO):Explore Patents

Title: Kazuo Yoshihara: Innovator in Semiconductor Technology

Introduction

Kazuo Yoshihara is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of memory devices.

Latest Patents

Yoshihara's latest patents include innovative designs for semiconductor devices. One patent describes a semiconductor device that features a nonvolatile memory cell, which includes first and second memory cells, a bit latch, and a saved register. In this design, the first writing operation can be interrupted based on a suspension command, allowing for a second writing operation to be executed seamlessly. This approach enhances the efficiency of data storage and retrieval.

Another patent aims to increase the writing speed to flash memory while minimizing noise. In this high-speed write mode, the memory controller performs simultaneous write operations with varying current values to optimize performance. This innovation addresses the challenges of writing speed and noise reduction in memory devices.

Career Highlights

Kazuo Yoshihara is currently employed at Renesas Electronics Corporation, where he continues to develop cutting-edge semiconductor technologies. His expertise in memory cell design and writing operations has positioned him as a key player in the industry.

Collaborations

Yoshihara has collaborated with notable colleagues, including Takanori Moriyasu and Akihiko Kanda. Their combined efforts have contributed to advancements in semiconductor technology and innovation.

Conclusion

Kazuo Yoshihara's contributions to semiconductor technology through his patents and work at Renesas Electronics Corporation highlight his role as an influential inventor in the field. His innovative designs continue to shape the future of memory devices.

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