Renesas Electronics Corporation

Kazuo Yoshihara

Takanori Moriyasu

Yoshihiko Asai

Tomoya Ogawa

Akihiko Kanda

Takayuki Nishiyama

A semiconductor device includes: a nonvolatile memory cell including first memory cells and second memory cells; a bit latch; and a saved register. In a first writing operation, first writing data are stored in the bit latch and the saved register, and writing to the first memory cells is executed based on the first writing data. During the first writing operation, the first writing operation is interrupted based on a suspension command, and a second writing operation is executed. In the second writing operation, second writing data are stored in the bit latch, and writing to the second memory cells is executed based on the second writing data. After the second writing operation is ended, the first writing data is reset to the bit latch based on a resume command, and the interrupted first writing operation is restarted based on the first writing data reset to the bit latch.

Semiconductor device

An object of the present invention is to increase a writing speed to a flash memory while suppressing an increase in noise. In the high-speed write mode, the memory controller simultaneously performs a first write operation with a second write current having a current value smaller than the first write current with respect to a second number of memory cells having a larger number than the first write current. At the completion of the first write operation, the memory controller simultaneously performs the second write operation by the third write current having a larger current value than the second write current with respect to the memory cell determined by the sense amplifier to have not completed the write operation in the determination process.

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Tokyo, Japan

Kazuo Yoshihara