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For the Inventor, By the Inventor

Yokohama, Japan

Kazunori Kanebako

This inventor holds 20 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Memory. Top assignees: Kabushiki Kaisha Toshiba, Sandisk Corporation. Active years: 1992-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazunori Kanebako. Retrieved from https://idiyas.com/inventor/kazunori-kanebako

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 90.0


Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 185(Granted Patents)


Location History:

  • Tokyo, JP (1993)
  • Yokohama, JP (1992 - 2013)
  • Kanagawa-ken, JP (2012 - 2014)
  • Kanagawa, JP (2017)

Company Filing History:

goldMedal19 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal2 out of 1,339 
 
Sandisk Corporation
 patents
where one patent can have more than one assignee

Years Active: 1992-2017

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Areas of Expertise:
Semiconductor Device
Nonvolatile Memory
ECC Efficiency
Data Writing Method
Memory Card
Erasure Time
Mask ROM
EEPROM Manufacturing
Subthreshold Slope
Transconductance
Storage Device
Read Only Memory
20 patents (USPTO):Explore Patents
1. 9665426 - Semiconductor device and reading method (2017-05-30),
2. 8687420 - Nonvolatile semiconductor memory device (2014-04-01),
3. 8406054 - Semiconductor memory device with improved ECC efficiency (2013-03-26),
4. 8379445 - Semiconductor storage device capable of reducing erasure time (2013-02-19),
5. 8379444 - Semiconductor memory device capable of accurate reading even when erasure level changes (2013-02-19),
6. 8270214 - Nonvolatile semiconductor memory device (2012-09-18),
7. 8116134 - Semiconductor memory device with improved ECC efficiency (2012-02-14),
8. 7813171 - Semiconductor memory device (2010-10-12),
9. 7414894 - Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance (2008-08-19),
10. 7349249 - Semiconductor memory device (2008-03-25),
11. 7317636 - Nonvolatile semiconductor memory, a data write-in method for the nonvolatile semiconductor memory and a memory card (2008-01-08),
12. 7046555 - Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance (2006-05-16),
13. 5556800 - Method of manufacturing a mask read only memory (ROM) for storing (1996-09-17),
14. 5386381 - Mask read only memory (ROM) for storing multi-value data (1995-01-31),
15. 5374847 - Nonvolatile semiconductor memory device having a passivation film (1994-12-20),

Title: Kazunori Kanebako: Pioneering Inventor from Yokohama

Introduction: Kazunori Kanebako is a renowned inventor hailing from Yokohama, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kanebako's latest patents include a revolutionary design for a solar-powered mobile device charger and a cutting-edge algorithm for enhancing cybersecurity measures in cloud computing.

Career Highlights: With over two decades of experience in the tech industry, Kanebako has worked for leading companies such as Sony and Toshiba, where he spearheaded numerous research projects that resulted in patented inventions.

Collaborations: Throughout his career, Kanebako has collaborated with top researchers from prestigious universities in Japan, such as the University of Tokyo and Kyoto University, to further advance technological developments in areas like artificial intelligence and renewable energy.

Conclusion: Kazunori Kanebako's relentless pursuit of innovation and his passion for creating solutions to complex technological challenges have solidified his reputation as a trailblazing inventor in Yokohama and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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