This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2010-2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2010-2011
Title: Kazunori Fujimoto - Innovator in Semiconductor Technology
Introduction
Kazunori Fujimoto is an inventor based in Osaka-shi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative approach focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patent Applications
Kazunori Fujimoto's notable patent application is titled "SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME." This application describes a semiconductor device that includes a substrate made of silicon carbide, an insulating film formed on the substrate's surface, a buffer film containing no aluminum, and an electrode containing aluminum. The design features an electrically conductive region within the substrate. A contact hole is strategically formed above this region, extending through the insulating film to expose the substrate's surface. The buffer film extends upward along the side wall of the contact hole, and the electrode is positioned in contact with the conductive region at the bottom of the hole, with the buffer film interposed between the electrode and the insulating film.
Conclusion
Kazunori Fujimoto's work in semiconductor technology showcases his innovative spirit and dedication to advancing the field. His contributions, particularly through his patent application, highlight the potential for improved semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
