Kazumichi Mitsusada

Title: Kazumichi Mitsusada: Innovator in Semiconductor Technology

Introduction

Kazumichi Mitsusada is a prominent inventor based in Kodaira, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the performance and reliability of semiconductor integrated circuits.

Latest Patents

Mitsusada's latest patents include innovative methods for fabricating semiconductor integrated circuit devices. One notable patent discloses a semiconductor device that features an internal circuit protected by an electrostatic protective circuit. This design allows both the internal circuit and the protective circuit to be formed on the same semiconductor substrate. The internal circuit, which can be a DRAM, includes MIS elements and employs a double-diffused drain structure. In contrast, the protective circuit utilizes a single-diffused drain structure. The patent outlines methods to prevent ion implantation into the protective circuit region, ensuring the integrity of the device. Another patent further enhances the electrostatic breakdown voltage by incorporating a lightly doped drain (LDD) structure in the internal circuit's MOSFETs.

Career Highlights

Throughout his career, Mitsusada has worked with notable companies such as Hitachi, Ltd. and the VLSI Technology Research Association. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Mitsusada has collaborated with esteemed colleagues, including Hidetoshi Iwai and Masamichi Ishihara. Their combined efforts have led to advancements in semiconductor design and fabrication techniques.

Conclusion

Kazumichi Mitsusada's contributions to semiconductor technology have significantly impacted the industry. His innovative patents and collaborations with leading professionals highlight his role as a key figure in advancing integrated circuit devices.