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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4803527 B1

PDFFull Text
Date of Patent:
Feb. 07, 1989

Filed:

Jun. 20, 1986

Semiconductor integrated circuit device having semi-insulator substrate

Applicant:
Inventors:

Yasushi Hatta, Tokyo, JP;

Kazumichi Mitsusada, Kodaira, JP;

Hirotoshi Tanaka, Yamanashi, JP;

Takehisa Hayashi, Kodaira, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry & Wands

Primary Examiner:

Andrew J James

Assistant Examiner:

Jerome Jackson

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 2313 ; 357 22 ; 3072 / ; 361 56 ; 361 91 ;
Abstract

Disclosed is a semiconductor integrated circuit device forming MESFETs by use of a semi-insulator GaAs substrate which prevents destruction of an electrostatic destruction protect circuit and a Schottky junction of an internal circuit by causing a part of electrostatic energy, which is applied to external terminals, to flow from a semiconductor region connected to the external terminals into another semiconductor region which is formed in the vicinity of the semiconductor region described above and to which a predetermined fixed potential is applied.

Find Patent Forward Citations

Hatta, Yasushi. (1989). Semiconductor integrated circuit device having semi-insulator substrate (U.S. Patent No. 4803527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4803527

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