Yokohama, Japan

Kazumi Unno

This inventor holds 5 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1996-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazumi Unno. Retrieved from https://idiyas.com/inventor/kazumi-unno

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 94(Granted Patents)


Location History:

  • Yokohama, JP (1996 - 1998)
  • Kanagawa-ken, JP (1998 - 2001)

Company Filing History:


Years Active: 1996-2001

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5 patents (USPTO):Explore Patents

Title: Kazumi Unno: Innovator in Semiconductor Light Emitting Devices

Introduction

Kazumi Unno is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. With a total of 5 patents to her name, Unno's work has advanced the efficiency and quality of semiconductor devices.

Latest Patents

Unno's latest patents include a "Led display device" and a "Semiconductor light emitting device with blocking layer." The Led display device features a semiconductor light-emitting device with a double heterostructure. This device is composed of an active layer and clad layers that sandwich the active layer. Notably, at least one of the clad layers has a multilayer structure with at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, is smaller than that of the other element layer distal from the active layer. This innovative arrangement improves the crystal quality of the interface between the active layer and the clad layer, effectively confining carriers in the active layer.

The semiconductor light-emitting device with a blocking layer includes a semiconductor substrate on which an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer is established. An excitation electrode is formed on the current blocking layer, while a substrate electrode is positioned on the opposite side of the substrate. The current blocking layer prevents current from flowing under the bonding pad, thereby enhancing the light emission efficiency of the device.

Career Highlights

Kazumi Unno is currently employed at Kabushiki Kaisha Toshiba, where she continues to innovate in the field of semiconductor technology. Her work has garnered attention for its potential applications in various electronic devices.

Collaborations

Unno collaborates with notable colleagues, including Hideki Nozaki and Katsuhiko Nisitani. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Kazumi Unno's contributions to semiconductor light-emitting devices exemplify her innovative spirit and dedication to advancing technology. Her patents reflect a commitment to improving device efficiency and quality, marking her as a significant figure in her field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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