The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 1998

Filed:

Jul. 10, 1996
Applicant:
Inventors:

Hideki Nozaki, Kawasaki, JP;

Kazumi Unno, Yokohama, JP;

Yasuo Idei, Tama, JP;

Katsuhiko Nishitani, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 94 ; 257 95 ; 257 96 ; 257 97 ; 257 98 ; 372 46 ; 372 49 ; 372 99 ;
Abstract

A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer (10) is formed. On the current blocking layer, an excitation electrode (20) is formed. A substrate electrode (9) is formed on a second principal plane of the substrate. The excitation electrode is composed of a bonding pad (21) and a current supply electrode (22). The current blocking layer is under the bonding pad. The current blocking layer prevents a current from flowing under the bonding pad. The current supply electrode improves the light emission efficiency of the device.


Find Patent Forward Citations

Loading…