Nirasaki, Japan

Kazuki Ota

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuki Ota. Retrieved from https://idiyas.com/inventor/kazuki-ota-4ccvzw82

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Kazuki Ota: Innovator in Film Forming Technology

Introduction

Kazuki Ota is a notable inventor based in Nirasaki, Japan. He has made significant contributions to the field of film forming technology, particularly in the development of methods for creating metal-containing nitride films.

Latest Patents

Kazuki Ota holds 1 patent for a film forming method and apparatus. This innovative method involves supplying a metal-containing gas, a silicon-containing gas, and a nitrogen-containing gas into a processing container. The process is characterized by a series of steps where the metal-containing and silicon-containing gases are supplied in a specific order multiple times before introducing the nitrogen gas.

Career Highlights

Kazuki Ota is associated with Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work has contributed to advancements in film forming technologies that are essential for various applications in electronics.

Collaborations

Kazuki has collaborated with notable coworkers such as Taichi Monden and Tetsu Zenko, enhancing the innovative capabilities within his team.

Conclusion

Kazuki Ota's contributions to film forming technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a significant advancement in the methods used for creating essential materials in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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