Yokkaichi, Japan

Kazuki Kajitani


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Kazuki Kajitani: Innovator in Memory Device Technology

Introduction

Kazuki Kajitani is a prominent inventor based in Yokkaichi, Japan. He is known for his contributions to the field of memory device technology. His innovative work has led to the development of a unique memory device that enhances data storage capabilities.

Latest Patents

Kazuki Kajitani holds a patent for a "Three-dimensional memory device containing multi-threshold-voltage drain select gates and method of making the same." This memory device features a stack of insulating layers and electrically conductive word line layers. It includes at least one first drain select gate electrode located over the stack, extending through a first and second drain select transistor. Additionally, it has at least one second drain select gate electrode positioned between the first drain select electrode and the stack, extending through a third and fourth drain select transistor. The design allows for improved performance in NAND memory strings, with varying threshold voltages for the transistors.

Career Highlights

Kazuki Kajitani is currently employed at Sandisk Technologies Inc., where he continues to push the boundaries of memory technology. His work has significantly impacted the efficiency and functionality of memory devices in modern electronics.

Collaborations

Kazuki has collaborated with notable colleagues, including Naohiro Hosoda and Keisuke Shigemura. Their combined expertise has contributed to advancements in the field of memory technology.

Conclusion

Kazuki Kajitani's innovative contributions to memory device technology exemplify the importance of research and development in the electronics industry. His patent reflects a significant advancement in memory storage solutions, showcasing his role as a leading inventor in this field.

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