Nirasaki, Japan

Kazuki Goto

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuki Goto. Retrieved from https://idiyas.com/inventor/kazuki-goto-cs80sw31

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kazuki Goto - Innovator in Film Formation Technologies

Introduction

Kazuki Goto is an inventor based in Nirasaki, Japan. He is known for his innovative approaches in the field of film formation technologies. Although he currently holds no granted patents, his work in developing methods for creating specialized films is noteworthy.

Latest Patent Applications

Kazuki Goto has submitted several patent applications that showcase his expertise. One of his latest applications is titled "METHOD OF FORMING BORON NITRIDE FILM AND FILM FORMING APPARATUS." This method involves forming a first film of amorphous boron nitride on a substrate by supplying a first process gas containing a borazine compound and a first plasma chemical species. Additionally, it includes forming a second film of hexagonal boron nitride on the first film using a second process gas containing a borazine compound and a second plasma chemical species.

Another significant application is "FILM FORMING METHOD AND FILM FORMING APPARATUS." This method outlines the process of forming a SiOC-based film. It includes preparing a substrate, forming a SiC-based film using carbon and silicon precursors, and then creating the SiOC-based film through an oxidation process. The application details the steps involved in achieving specific film thicknesses and the use of plasma processing.

Conclusion

Kazuki Goto's contributions to the field of film formation technologies reflect his innovative spirit and dedication to advancing material science. His latest patent applications demonstrate his potential to impact the industry significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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