Ehime, Japan

Kazuhisa Ishibashi

USPTO Granted Patents = 8 

Average Co-Inventor Count = 1.7

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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8 patents (USPTO):Explore Patents

Title: Kazuhisa Ishibashi: Innovator in Ion Implantation Technology

Introduction

Kazuhisa Ishibashi, a prominent inventor residing in Ehime, Japan, has made significant contributions to the field of ion implantation technology. With a total of seven patents to his name, Ishibashi has established himself as a key figure in the research and development of advanced technologies that enhance manufacturing processes.

Latest Patents

Among his latest inventions is the patent for an "Ion Implanter and Model Generation Method." This innovative ion implanter features a beam generation device responsible for producing an ion beam in accordance with an implantation recipe. Additionally, it includes multiple measurement devices that assess beam currents of the generated ion beam, paired with a control device that evaluates the validity of these measurements by utilizing a model based on diverse past data sets.

Another significant patent is the "Ion Implanter and Ion Implantation Method," which outlines a system that incorporates a beam generation device for irradiating a workpiece with an ion beam. This invention also incorporates a control device to set operational parameters, a measurement device for assessing beam characteristics, and a storage device to archive data sets that correlate operation parameters with measurement values. An analysis device within this framework generates an estimation function for beam characteristics based on the archived data sets.

Career Highlights

Kazuhisa Ishibashi is employed at Sumitomo Heavy Industries Ion Technology Co., Ltd., where he continues to drive advancements in ion implantation technologies. His pioneering work not only reflects his expertise but also underscores the company's commitment to innovation in engineering solutions.

Collaborations

Throughout his career, Ishibashi has collaborated with talented professionals such as Tetsuya Kudo and Mikio Yamaguchi. These collaborations have contributed to the synergy of ideas and innovations driving the development of cutting-edge technologies in their field.

Conclusion

Kazuhisa Ishibashi's contributions to ion implantation technology are pivotal in advancing manufacturing processes. His patents exemplify his expertise and commitment to innovation, making him a valuable asset in the realm of technology development. As he continues to push the boundaries of what is possible, the impact of his work is sure to be felt for years to come.

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