The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Oct. 25, 2022
Applicant:

Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;

Inventors:

Kazuhisa Ishibashi, Ehime, JP;

Tetsuya Kudo, Ehime, JP;

Mikio Yamaguchi, Ehime, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/304 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/304 (2013.01); H01J 2237/30416 (2013.01); H01J 2237/31703 (2013.01);
Abstract

An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.


Find Patent Forward Citations

Loading…