The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Aug. 07, 2020
Applicant:

Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;

Inventor:

Kazuhisa Ishibashi, Ehime, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/302 (2006.01); H01J 37/317 (2006.01); C23C 14/48 (2006.01);
U.S. Cl.
CPC ...
C23C 14/48 (2013.01); H01J 37/3026 (2013.01); H01J 37/3171 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/3171 (2013.01);
Abstract

An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.


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