Hyogo, Japan

Kazuhiro Ishimaru

This inventor holds 2 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1994-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuhiro Ishimaru. Retrieved from https://idiyas.com/inventor/kazuhiro-ishimaru

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 62(Granted Patents)


Company Filing History:


Years Active: 1994-1996

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2 patents (USPTO):Explore Patents

Title: Kazuhiro Ishimaru and Semiconductor Interconnection Technology.

Introduction

Kazuhiro Ishimaru is an inventor associated with Hyogo, Japan, and Mitsubishi Denki Kabushiki Kaisha, commonly known as Mitsubishi Electric. His patent work focuses on semiconductor interconnection structures designed to improve electrical contact stability and resistance to material migration. His listed portfolio includes 2 patents.

Latest Patents

Ishimaru’s listed patents describe related approaches to connecting multilayer aluminum interconnections in semiconductor integrated circuits.

“Method of Forming an Interconnection Structure” describes a structure in which a titanium layer contacts the surface of a first aluminum interconnection through a hole in an insulating layer. A titanium nitride layer and an aluminum alloy layer are formed above it. The design aims to stabilize contact resistance between the interconnection layers and improve resistance to electron migration and stress migration.

“Semiconductor Device Having a Titanium and a Titanium Compound” describes a similar multilayer arrangement. The first aluminum interconnection has a surface layer made from a high-melting-point metal, a compound or silicide of such a metal, or amorphous silicon. A second aluminum interconnection connects to it through an insulating-layer opening and includes titanium, titanium nitride, and aluminum alloy layers. The stated benefits include more stable electrical contact resistance and improved resistance to electron and stress migration.

Career Highlights

Ishimaru’s listed inventions address reliability challenges in semiconductor devices, particularly the performance of contacts between aluminum interconnection layers. The described use of titanium and titanium nitride layers is intended to support stable electrical connections and durable interconnection structures.

Collaborations

Ishimaru is associated with Mitsubishi Electric. Shigeru Harada and Kimio Hagi are identified as his coworkers.

Conclusion

Kazuhiro Ishimaru’s listed patent work centers on improving the reliability of semiconductor interconnections through layered materials and carefully designed electrical contacts.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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