The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1996
Filed:
Jun. 03, 1994
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum interconnection layer is formed on a main surface of the semiconductor substrate. The first aluminum interconnection layer has a surface layer which includes any of high melting point metal, high melting point metal compound, high melting point metal silicide, or amorphous silicon. An insulating layer is formed on the first aluminum interconnection layer, and has a through hole if formed extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the surface layer of the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.