Akishima, Japan

Kazuhiro Hata


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2004-2010

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4 patents (USPTO):Explore Patents

Title: Kazuhiro Hata: Innovator in Semiconductor Technology

Introduction

Kazuhiro Hata is a prominent inventor based in Akishima, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of integrated circuit devices. With a total of 4 patents to his name, Hata's work has had a notable impact on the industry.

Latest Patents

One of Hata's latest patents focuses on a method for manufacturing semiconductor integrated circuit devices. This technique aims to reduce leak current by minimizing contamination from metals that compose a polymetal gate of a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET). The process involves etching a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well. By performing over-etching and forming a sidewall film, Hata's method effectively reduces contamination on the gate insulating film and prevents the diffusion of materials into the semiconductor substrate, thereby mitigating the increase of leak current.

Career Highlights

Throughout his career, Kazuhiro Hata has worked with notable companies, including Elpida Memory, Inc. His expertise in semiconductor technology has allowed him to contribute to advancements in the field, making him a respected figure among his peers.

Collaborations

Hata has collaborated with several professionals in the industry, including Hiroshi Kujirai and Kousuke Okuyama. These collaborations have further enriched his work and contributed to the development of innovative solutions in semiconductor manufacturing.

Conclusion

Kazuhiro Hata's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of integrated circuit devices.

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